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DMG4800LK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10A TO252-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG4800LK3-13
- Description：MOSFET N-CH 30V 10A TO252-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 5 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.71W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for DMG4800LK3-13
Single FETs, MOSFETs Overview
The DMG4800LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) case with a drain voltage rating of 30 V and a continuous drain current of 10 A at +25°C. The device exhibits a maximum on-resistance of 16 mΩ at 10 V gate drive and 9 A, or 24 mΩ at 4.5 V and 7 A. It includes an integrated body diode with a forward voltage of 1.0 V max at 1 A. The component operates within a temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device configuration
- Qualified to AEC-Q101 automotive reliability standards
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-reliability general-purpose switching applications
- Low-side load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the required package variant matches the TO-252 physical dimensions provided in the datasheet outline. Ensure compliance with the specified moisture sensitivity level and soldering requirements for surface mount assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with a 30 V breakdown voltage is required for automotive-grade applications. The low on-resistance supports efficient power handling in load switch designs. Verify that the thermal resistance characteristics align with the system's heat dissipation capabilities under steady-state and pulsed operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMG4800L family of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed for high-efficiency switching applications requiring robust performance in automotive environments. The specific model utilizes a DPAK package to balance current carrying capacity with compact board space requirements.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters before implementation.
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