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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：20mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：478.9pF @ 16V
- Power - Max：1.42W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMG4822SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and a continuous drain current (ID) of 10 A at +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) with a maximum value of 20 mΩ at VGS = 10V and ID = 8.5A, or 31 mΩ at VGS = 4.5V and ID = 6A. Total gate charge (Qg) is typically 10.5 nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Dual N-channel configuration for compact power management solutions
- Optimized for low on-state resistance and superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free "Green" device
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS 2 and RoHS 3 directives, as well as the halogen and antimony-free definitions provided by the manufacturer. Ensure the SO-8 package dimensions align with the PCB footprint requirements.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30 V rating and high current capability is required. The low RDS(ON) makes it suitable for efficient power conversion applications. Consider the thermal resistance and power dissipation limits for the intended operating environment. Verify compatibility with the driving circuit's gate voltage levels, particularly for the 4.5V and 10V drive conditions specified for on-resistance ratings.
Part Context
This part belongs to the DMG4822 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching speeds. An automotive-compliant version is available under the separate datasheet for DMG4822SSDQ. The standard DMG4822SSD-13 variant is intended for general commercial and industrial applications requiring reliable power switching.
Replacement Considerations
The DMG4822SSDQ is the automotive-compliant alternative for this component family. When substituting, verify that the replacement part matches the 30 V BVDSS, 10 A ID, and SO-8 package specifications. Ensure the new component meets the same electrical characteristics for RDS(ON) and gate charge to maintain circuit performance.
