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DMG4N65CT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N CH 650V 4A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG4N65CT
- Description：MOSFET N CH 650V 4A TO220-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.19W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for DMG4N65CT
Single FETs, MOSFETs Overview
The DMG4N65CT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 650V and a continuous drain current of 4.0A at 25°C case temperature. The device exhibits a maximum on-resistance of 3.0Ω at VGS = 10V and ID = 2A. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220-3 through-hole package.
Single FETs, MOSFETs Feature Summary
- High breakdown voltage rating suitable for demanding power applications
- Low input capacitance supporting fast switching performance
- Lead-free finish with RoHS compliance and halogen-free construction
- Qualified to AEC-Q101 standards for high reliability requirements
Single FETs, MOSFETs Applications
- Motor control systems
- Backlighting circuits
- DC-DC converters
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific revision level against the latest datasheet DS35719 Rev. 4-2 before integration. Confirm that the TO-220-3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified thermal resistance values under your actual operating conditions. Validate component authenticity through authorized supply channels only.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation is required alongside moderate current handling capabilities. The TO-220-3 package facilitates efficient heat dissipation compared to surface-mount alternatives. Consider the gate threshold voltage characteristics to ensure compatibility with your driver circuitry logic levels. Evaluate the total gate charge specifications for switching frequency limitations in your design.
Single FETs, MOSFETs Part Context
This part belongs to the DMG series of complementary MOSFETs from Diodes Incorporated. The series focuses on low on-resistance and fast switching technologies. These components are designed for high-efficiency power management applications across industrial and consumer electronics markets.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully before implementation.
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