DMG6301UDW-13

Overview

The DMG6301UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 25 V and a gate-source voltage (VGSS) rating of 8 V. The device provides a continuous drain current (ID) of 0.24 A at VGS = 4.5 V and 0.22 A at VGS = 2.7 V, with a typical static drain-source on-resistance (RDS(ON)) of 4 Ω at VGS = 4.5 V and 5 Ω at VGS = 2.7 V. Total power dissipation is rated at 0.3 W to 0.37 W depending on the board configuration. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-363 surface-mount package.

Feature Summary

• Dual N-channel configuration integrated into a single small surface mount package
• Low on-state resistance optimized for high efficiency power management applications
• Integrated gate protection diodes against electrostatic discharge exceeding 6kV Human Body Model
• Qualified to AEC-Q101 standards for automotive and high reliability environments

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the official datasheet. Confirm compliance requirements including RoHS 2, halogen-free status, and AEC-Q101 qualification during procurement. Ensure the source document matches the DS36288 Rev. 1-2 revision level to validate all electrical parameters and mechanical data.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The 25 V breakdown voltage suits systems operating below this threshold. Consider the 4 Ω to 5 Ω on-resistance values for efficiency calculations at specific gate drive voltages. Verify that the SOT-363 footprint fits the PCB layout constraints and that the thermal resistance characteristics meet the system's heat dissipation requirements.

Part Context

This part belongs to the DMG6301UDW family of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The standard version is available in a 3,000-unit reel, while the -13 suffix denotes a 10,000-unit reel. Both variants share identical electrical specifications and are designed for miniaturized power management circuits requiring dual channel functionality in a minimal footprint.

Replacement Considerations

The DMG6301UDW-7 is a direct functional substitute with identical electrical ratings, differing only in the 3,000-unit reel packaging quantity. No other cross-model replacements are confirmed in the provided documentation.

FAQ

What is the maximum pulsed drain current for the DMG6301UDW-13?

The maximum pulsed drain current (IDM) is 1.5 A, based on a 10µs pulse with a 1% duty cycle.

Does the DMG6301UDW-13 include internal gate protection?

Yes, the device includes integrated gate protection diodes and is qualified to withstand over 6kV using the Human Body Model.

What is the typical total gate charge (Qg) for this MOSFET?

The typical total gate charge is 0.36 nC, measured at VGS = 4.5 V, VDS = 5 V, and ID = 0.2 A.