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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.2A 8TSSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.2A
- Rds On (Max) @ Id, Vgs：23mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：143pF @ 10V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The DMG6968UTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8 surface-mount package with a drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 5.2 A at 25°C. The device exhibits a maximum static drain-source on-resistance (RDS(on)) of 34 mΩ at VGS = 1.8V and ID = 3.5A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.35 V to 0.95 V, a total gate charge (Qg) of 8.8 nC, and a power dissipation (PD) of 1.0 W. The component operates within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSSOP-8 package
- Low on-resistance for efficient power switching
- Fast switching speed supported by low input capacitance
- ESD protection rated up to 2kV
Applications
- Power management circuits requiring dual channel control
- Battery protection systems
- Load switch applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and AEC-Q101 qualification requirements if automotive reliability is necessary for the intended application environment.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required within a 20 V voltage rating. Ensure the design accommodates the 1.0 W power dissipation limit and the thermal resistance characteristics provided in the datasheet. Verify that the gate drive voltage levels are sufficient to achieve the desired on-resistance performance under the expected load conditions.
Part Context
This part belongs to the DMG6968UTS series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is designed for surface mount applications. The product line emphasizes low on-resistance and fast switching capabilities suitable for portable and battery-powered electronic devices.
Replacement Considerations
Consult official substitution lists or cross-reference databases for verified alternative part numbers. Ensure any replacement maintains identical pinout configurations, voltage ratings, and current handling capabilities to guarantee circuit compatibility without redesign.
FAQ
What is the maximum pulsed drain current for the DMG6968UTS-13?
The maximum pulsed drain current (IDM) is specified as 30 A.
Does the DMG6968UTS-13 meet automotive reliability standards?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the typical input capacitance of this MOSFET?
The typical input capacitance (Ciss) is 143 pF, measured at VDS = 10V, VGS = 0V, and f = 1.0MHz.
