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DMG7401SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 9.8A PWRDI3333-8. Review the specifications below when checking this part for your BOM.
The DMG7401SFG-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates in the PowerDI3333-8 package. The device provides a maximum on-resistance of 13mΩ at VGS = -10V and 25mΩ at VGS = -4.5V. Continuous drain current reaches -9.8A at +25°C ambient temperature. It includes an internal gate protection diode and meets AEC-Q101 standards for high reliability.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS35623 Rev. 12-3 matches procurement specifications. Ensure compliance with RoHS directives and AEC-Q101 automotive standards if required. Check moisture sensitivity level 1 per J-STD-020 handling requirements during assembly.
Select this component for applications requiring compact power management solutions. Evaluate thermal resistance values based on PCB copper area and mounting conditions. Consider gate threshold voltage variations across temperature ranges. Verify compatibility with system voltage levels and switching frequency requirements.
This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It is designed as a space-saving alternative to traditional packages like SO-8. The component supports high-density circuit designs where board real estate is limited.
The datasheet explicitly states not recommended for new design and recommends using DMP3018SFV instead.
The maximum continuous drain current is -9.8A at TA = +25°C and -7.7A at TA = +70°C.
Yes, the DMG7401SFG-7 includes an integrated ESD protected gate protection diode.
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