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DMG7430LFGQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10.5A PWRDI3333. Review the specifications below when checking this part for your BOM.
The DMG7430LFGQ-7 is an N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 30V and a maximum continuous drain current of 10.5A at 25°C. The on-resistance is 11mΩ at VGS=10V and 15mΩ at VGS=4.5V. Gate-source voltage is ±20V, with a threshold voltage range of 1.4V to 2.5V. Total gate charge is 26.7nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements necessary for automotive applications requiring specific change control protocols.
Select this component when designing automotive systems requiring low on-state resistance and robust switching performance within a compact footprint. Ensure the application operates within the specified 30V drain-source voltage limit and utilizes appropriate thermal management to handle power dissipation ratings under steady-state or transient conditions.
This device belongs to the DMG7430LFGQ series manufactured by Diodes Incorporated. It is designed to meet stringent automotive reliability standards, supported by PPAP documentation. The component is produced in IATF 16949 certified facilities, ensuring consistency for high-reliability electronic assemblies.
DMG7430LFGQ-13
Yes, it is qualified to AEC-Q101 standards and is suitable for automotive applications requiring specific change control.
The maximum pulsed drain current (IDM) is 90A, based on a 10µs pulse duration and 1% duty cycle.
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