DMG7N65SJ3

Single FETs, MOSFETs Overview

The DMG7N65SJ3 is an N-channel MOSFET manufactured by Diodes Incorporated, housed in a TO-251-3 (IPak) package with short leads. It features a drain-source breakdown voltage of 650V and a continuous drain current of 5.5A at case temperature. The device exhibits a maximum on-resistance of 1.4 ohms at 2.5A and 10V gate drive. Gate threshold voltage is specified at a maximum of 4V at 250µA, while total gate charge reaches 25nC at 10V. Maximum power dissipation is 125W at case temperature, operating within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability designed for robust switching applications
• Through-hole mounting configuration for secure mechanical attachment
• Complementary N-channel metal oxide semiconductor technology

Single FETs, MOSFETs Applications

• General purpose switching circuits
• Power management systems requiring high voltage isolation
• Industrial control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation when sourcing, as identical part numbers may appear under different corporate entities such as ISC. Confirm that the component matches the Diodes Incorporated datasheet specifications regarding pinout and electrical ratings. Ensure the TO-251 package variant aligns with board layout requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs necessitating high voltage tolerance combined with through-hole assembly methods. Evaluate thermal management strategies carefully due to the moderate current rating relative to the high voltage class. Compare gate charge characteristics against available driver capabilities to ensure efficient switching performance without excessive drive losses.

Single FETs, MOSFETs Part Context

This component belongs to the discrete semiconductor category, specifically within the field-effect transistor segment. Diodes Incorporated utilizes this part number to denote a standard N-channel enhancement mode device. The TO-251 package provides a balance between thermal performance and mechanical stability for non-surface-mount implementations.

Single FETs, MOSFETs Replacement Considerations

Cross-reference alternative suppliers offering equivalent N-channel MOSFETs with matching 650V ratings and TO-251 footprints. Verify that substitute devices maintain compatible gate threshold voltages and on-resistance values to preserve circuit functionality.