DMG8601UFG-7

Overview

The DMG8601UFG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN3030-8 package and operates with a drain-source voltage of 20 V and a gate-source voltage of ±12 V. The device supports a continuous drain current of 6.1 A at +25°C, reducing to 5.2 A at +70°C, with a pulsed current rating of 27 A. Static drain-source on-resistance ranges from 17 mΩ to 34 mΩ depending on the gate drive and load conditions. Key electrical parameters include an input capacitance of 143 pF, total gate charge of 8.8 nC, and power dissipation of 0.92 W. The component is qualified to AEC-Q101 standards for high reliability.

Feature Summary

• Dual N-channel configuration in a compact U-DFN3030-8 package
• AEC-Q101 qualified for automotive-grade high reliability
• ESD protection rated up to 2 kV
• Low on-resistance and low input capacitance for efficient switching

Applications

• Automotive electronic control units (ECUs)
• Power management circuits requiring dual channel isolation
• Load switching applications in vehicle systems

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the U-DFN3030-8 case dimensions match the required PCB footprint layout. Ensure compliance with RoHS and halogen-free requirements if mandated by the end-product specifications.

Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. The 20 V rating suits low-voltage automotive and industrial logic-level applications. Evaluate thermal performance based on the 136 °C/W junction-to-ambient resistance and ensure adequate copper area on the PCB for heat dissipation during continuous operation.

Part Context

This part belongs to the DMG8601 series of dual N-channel MOSFETs. It utilizes the U-DFN3030-8 surface-mount package designed for space-constrained designs. The device is specifically engineered to meet automotive reliability standards while providing low static and dynamic losses.

Replacement Considerations

Direct substitutes must match the dual N-channel architecture, 20 V rating, and U-DFN3030-8 package. Verify pinout compatibility and thermal characteristics before implementation.