DMG8880LSS-13

$0.49

Description：MOSFET N-CH 30V 11.6A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6754e1356c5c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG8880LSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 11.6A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG8880LSS-13

Description：MOSFET N-CH 30V 11.6A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1289 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.43W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG8880LSS-13

DMG8880LSS-13

Single FETs, MOSFETs Overview

The DMG8880LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11.6 A at 25°C ambient temperature. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 10 mΩ at Vgs = 10 V and Id = 11.6 A, or 14 mΩ at Vgs = 4.5 V and Id = 10.7 A. Total gate charge (Qg) is 27.6 nC at Vgs = 10 V. Power dissipation is rated at 1.43 W at Ta = 25°C with a thermal resistance (RθJA) of 87 °C/W. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device
Qualified to AEC-Q101 standards for high reliability

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the datasheet revision matches the specific manufacturing lot. Ensure compliance with environmental directives such as EU RoHS 2011/65/EU. Check for any design status updates prior to procurement.

Single FETs, MOSFETs Selection Notes

Evaluate the 30 V drain-source voltage rating against circuit requirements. Assess the 11.6 A continuous current capability under specified thermal conditions. Consider the 87 °C/W thermal resistance for heat dissipation planning. Verify compatibility with standard SO-8 surface mount packaging constraints.

Single FETs, MOSFETs Part Context

This component belongs to the DMG8880LSS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes an SO-8 surface mount case constructed from molded plastic. The device is designed for general switching applications requiring low on-resistance and fast switching speeds within a compact footprint.