DMG9926USD-13

Overview

The DMG9926USD-13 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SO-8 package with a maximum drain-source voltage of 20V and a steady-state drain current of 8A at +25°C. The device achieves a low on-state resistance, specified as 24mΩ max at VGS = 4.5V and ID = 8A. Total power dissipation is rated at 1.3W, with a thermal resistance from junction to ambient of 96°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration designed for high efficiency power management applications
• Optimized for minimized on-state resistance while maintaining superior switching performance
• Qualified to AEC-Q101 standards for automotive-grade high reliability
• Totally lead-free and fully RoHS compliant with halogen and antimony free construction

Applications

• Power Management Functions
• DC-DC Converters

Procurement Notes

Verify the ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, specifically the RoHS directive compliance and the absence of intentionally added lead. Ensure the procurement channel provides traceability to Diodes Incorporated manufacturing sites.

Selection Notes

Select this component when a compact dual N-channel MOSFET solution is required for low voltage power switching. Evaluate the 20V breakdown voltage against the circuit's peak operating conditions. Consider the 1.3W power dissipation limit and the 96°C/W thermal resistance for adequate heat sinking or PCB pad layout requirements in the final design.

Part Context

This part belongs to the DMG9926USD series of dual N-channel enhancement mode field effect transistors. It utilizes DMOS trench technology to achieve high cell density and minimize on-state resistance. The product is available in an SO-8 case with matte tin annealed over copper lead frame terminals, suitable for automated assembly processes.

Replacement Considerations

Direct replacements must match the dual N-channel topology, 20V rating, and SO-8 package. Verify pinout compatibility between Drain, Source, and Gate configurations. Check if alternative manufacturers offer equivalent RDS(on) values and gate threshold voltages to ensure seamless integration without schematic modifications.