DMHC10H170SFJ-13

Overview

The DMHC10H170SFJ-13 is a complementary enhancement mode MOSFET H-bridge array manufactured by Diodes Incorporated. It integrates two N-channel and two P-channel transistors within a single V-DFN5045-12 package. The N-channel devices feature a drain-source voltage (BVDSS) of 100V, with maximum on-resistance (RDS(ON)) values of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. Continuous drain current ratings are 2.9A at 25°C and 2.3A at 70°C. The P-channel devices provide -100V BVDSS, with RDS(ON) maximums of 250mΩ at VGS=-10V and 300mΩ at VGS=-4.5V. Total power dissipation is rated at 2.1W.

Feature Summary

• Complementary H-Bridge Configuration: Integrates matched N-channel and P-channel MOSFETs in a single package to simplify circuit design for bridge applications.
• Low On-Resistance: Engineered to minimize static conduction losses while maintaining superior switching performance for high-efficiency power management.
• Green Device Compliance: Manufactured using lead-free processes, fully RoHS compliant, and free from halogens and antimony.

Applications

• High-efficiency bridge rectifiers
• Power-management applications requiring compact H-bridge solutions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive qualification standards if intended for AEC-Q100/101/104/200 applications, as standard production may differ from qualified facility output.

Selection Notes

Select this component when a compact, complementary H-bridge solution is required for 100V systems. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Verify thermal management capabilities against the 60°C/W junction-to-ambient resistance rating for the target operating environment.

Part Context

This device belongs to the DMHC10 series of complementary MOSFET arrays from Diodes Incorporated. It utilizes the V-DFN5045-12 surface-mount package, designed for automated assembly. The product represents a generation focused on balancing low on-state resistance with fast switching characteristics for modern power electronics.

Replacement Considerations

Direct pin-compatible replacements must be sourced from official manufacturer cross-reference lists. Verify that any substitute maintains the same 100V rating, H-bridge topology, and V-DFN5045-12 footprint without altering electrical parameters significantly.

FAQ

What is the maximum continuous drain current for the N-channel devices?

The N-channel devices support a continuous drain current of 2.9A at an ambient temperature of +25°C, which decreases to 2.3A at +70°C.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage exhibits negative temperature coefficient behavior, decreasing as the junction temperature increases, as illustrated in the typical characteristics graphs.

What is the body diode reverse recovery charge for the N-channel device?

The body diode reverse recovery charge (QRR) is typically 35.2 nC when tested at IS = 12.8A and dI/dt = 100A/μs.