DMHC3025LSDQ-13

Overview

The DMHC3025LSDQ-13 is a complementary enhancement mode MOSFET H-Bridge from Diodes Incorporated, integrating two N-channel and two P-channel devices in an SOIC-8 package. It is qualified to AEC-Q101 standards for automotive applications. The N-channel features a 30V drain-source voltage (BVDSS) with a maximum on-resistance of 25mΩ at VGS=10V and 40mΩ at VGS=4.5V. Continuous drain current reaches 6.0A at VGS=10V and 4.6A at VGS=4.5V. The P-channel counterpart offers -30V BVDSS, with maximum on-resistance of 50mΩ at VGS=-10V and 80mΩ at VGS=-4.5V. Total power dissipation is rated at 1.5W.

Feature Summary

• Integrates two N-channel and two P-channel enhancement mode MOSFETs into a single SOIC-8 package for compact H-Bridge designs.
• Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission for automotive manufacturing requirements.
• Features low on-resistance and low input capacitance to support fast switching speeds and efficient power management.
• Manufactured using halogen-free and antimony-free green molding compounds compliant with EU RoHS directives.

Applications

• Driving solenoids in automotive or industrial systems
• Controlling DC motors in various actuation circuits
• Powering audio output stages requiring push-pull configurations

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required AEC-Q101 qualification level if the application demands automotive-grade reliability standards. Ensure the SO-8 package dimensions align with the target PCB footprint layout constraints.

Selection Notes

Select this component when a compact solution for driving inductive loads like solenoids or DC motors is required within space-constrained environments. The integrated complementary pair simplifies gate drive circuitry compared to discrete components. Verify that the 30V breakdown voltage and current ratings meet the peak operational demands of the load without exceeding the thermal limits defined by the junction-to-ambient resistance.

Part Context

This device belongs to the DMHC3025LS series of complementary MOSFETs designed specifically for H-Bridge topologies. It consolidates four transistors into one package to reduce board space and assembly complexity. The SO-8 form factor provides a balance between thermal performance and pin count suitable for surface-mount technology processes.

Replacement Considerations

Direct replacements must match the SO-8 package, 30V rating, and complementary N/P channel configuration. Verify that any substitute part maintains similar on-resistance values and gate charge characteristics to ensure compatible switching speeds and thermal behavior in existing H-Bridge layouts.

FAQ

What is the maximum continuous drain current for the N-channel at VGS = 4.5V?

The maximum continuous drain current for the N-channel at VGS = 4.5V is 4.6A at TA = +25°C.

Is this component suitable for automotive applications?

Yes, the DMHC3025LSDQ-13 is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive applications.

What is the typical total gate charge for the N-channel at VGS = 10V?

The typical total gate charge (Qg) for the N-channel at VGS = 10V is 11.7 nC.