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The DMHC4035LSDQ-13 is a complementary enhancement mode MOSFET H-Bridge featuring two N-channel and two P-channel devices in an SO-8 package. It is qualified to AEC-Q101 standards for automotive applications. The N-channel device offers a maximum drain-source voltage of 40V, with on-resistance values of 45mΩ at VGS=10V and 58mΩ at VGS=4.5V. The P-channel device provides -40V breakdown, with on-resistance values of 65mΩ at VGS=-10V and 100mΩ at VGS=-4.5V. Total power dissipation is rated at 1.5W, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance requirements and is halogen-free. Ensure the procurement documentation explicitly references the AEC-Q101 qualification status required for automotive-grade deployment.
Select this component when a compact H-bridge solution is required for low-voltage DC motor or solenoid applications. The SO-8 package accommodates four transistors, reducing board space compared to discrete implementations. Verify that the gate drive voltage levels align with the specified RDS(ON) thresholds for optimal efficiency.
This part belongs to Diodes Incorporated's DMHC series of complementary MOSFETs designed specifically for bridge configurations. The 'DQ' suffix indicates AEC-Q101 automotive qualification. The device integrates four enhancement-mode transistors to simplify driver circuit design while maintaining low thermal resistance within the standard surface-mount footprint.
Direct replacements include the DMHC4035LSD-13 (non-automotive grade) or other Diodes Incorporated DMHC series parts with matching SO-8 pinouts and similar electrical ratings. Verify pin compatibility and thermal performance before substitution.