DMJ2093-000

RF Diode Overview

The DMJ2093-000 is a beam-lead silicon Schottky barrier mixer diode configured as a series pair. Designed for X-band applications (8.2 to 12.4 GHz), it features high drive characteristics with a maximum junction capacitance of 0.30 pF at 0 V and a typical series resistance of 8 Ω at 5 mA. The device exhibits a breakdown voltage of 4 V at 10 μA and a forward voltage range of 550 to 650 mV at 1 mA. It operates within an ambient temperature range of -65°C to +175°C, supports a continuous wave power dissipation of 75 mW per junction, and utilizes the 504-012 outline drawing.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical Process Control wafer fabrication ensures uniformity and close impedance control
• Low parasitics and low intermodulation distortion suitable for balanced mixers

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Balanced Mixers
• Detectors
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify component authenticity through authorized Skyworks channels or certified distributors. Request official datasheets and material compliance documentation prior to integration. Confirm that the specific ordering suffix matches the required package configuration and electrical tolerances. Ensure handling procedures strictly adhere to industry-standard electrostatic discharge precautions during storage and assembly.

RF Diode Selection Notes

Select this part when designing X-band circuits requiring high local oscillator drive levels. The series pair configuration provides matched characteristics ideal for balanced mixer topologies. Verify that the 8.2 to 12.4 GHz frequency band aligns with system requirements. Consider the 550 to 650 mV forward voltage drop when calculating local oscillator power budgets.

RF Diode Part Context

This component belongs to the DMJ Series, which represents the high-drive category within Skyworks' beam-lead Schottky mixer diode family. While other series like DME and DMF offer medium and low drive options respectively, the DMJ designation specifically indicates higher forward voltage thresholds optimized for high-power mixer applications across S, C, X, Ku, K, and Ka bands.

RF Diode Replacement Considerations

DMJ2092-000 (S/C Band Series Pair) and DMJ2832-000 (Ku Band Series Pair). These parts share identical packaging and structural configurations but are optimized for different frequency ranges.