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DMJ2502-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
RF Diode specifications for DMJ2502-000
- Description：RF DIODE SCHOTTKY 75MW
- Series：DMJ
- Mfr：Skyworks Solutions Inc.
- Package：Tray
- Diode Type：Schottky - Ring
- Voltage - Peak Reverse (Max)：-
- Current - Max：100 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：75 mW
- Operating Temperature：-65°C ~ 175°C (TA)
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for DMJ2502-000
RF Diode Overview
The DMJ2502-000 is a beam-lead silicon Schottky mixer diode quad configured as a ring structure, designed for S-band and C-band applications. It operates within the 2 to 8 GHz frequency range. Key electrical specifications include a maximum junction capacitance of 0.50 pF at 0 V and 1 MHz, and a series resistance of 5 Ω measured at 5 mA. The device features a high drive level with a barrier voltage of 4 V at 10 μA and a forward voltage ranging from 500 mV to 600 mV at 1 mA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA.
RF Diode Feature Summary
- Beam-lead design facilitates bonding to small junction areas characteristic of low capacitance microwave devices.
- Statistical process control wafer fabrication ensures narrow spread of capacitance values for close impedance control.
- Low parasitics and uniformity make the device well-suited for balanced mixer configurations.
RF Diode Applications
- Microwave Integrated Circuits (MICs)
- Balanced mixers
- Detectors
RF Diode Procurement Notes
Verify component authenticity through authorized Skyworks channels or certified distributors. Confirm lot traceability and compliance with RoHS directives. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly to prevent damage to the sensitive beam-lead structures.
RF Diode Selection Notes
Select this part for S-band and C-band balanced mixer designs requiring high drive levels. Compare against DME and DMF series variants if lower drive voltages or different package configurations are needed. Verify that the 75 mW junction power dissipation rating meets the thermal requirements of the specific application environment.
RF Diode Part Context
This component belongs to the DMJ series of N-type high-drive Schottky mixer diodes manufactured by Skyworks Solutions. The series includes single, pair, common cathode, anti-parallel, and quad configurations across S, C, X, Ku, K, and Ka bands. The DMJ2502-000 specifically utilizes the 488-002 outline drawing for its ring quad package.
RF Diode Replacement Considerations
DMJ2312-000
RF Diode FAQ
What is the operating frequency band for the DMJ2502-000?
The DMJ2502-000 is designed for S-band and C-band applications, covering frequencies from 2 GHz to 8 GHz.
How is the DMJ2502-000 internally configured?
It is configured as a beam-lead ring quad consisting of four N-type high-drive Schottky diodes.
What is the maximum continuous wave power dissipation?
The absolute maximum rating for continuous wave power dissipation is 75 mW per junction.
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