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DMJ2777-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
The DMJ2777-000 is a beam-lead silicon Schottky barrier mixer diode designed for applications through 40 GHz. It operates in the X-band (8.2 to 12.4 GHz) and features high drive characteristics with a maximum junction capacitance of 0.30 pF at 0 V, 1 MHz. The device has a series resistance of 8 Ω at 5 mA, a breakdown voltage of 4 V at 10 μA, and a forward voltage ranging from 550 mV to 650 mV at 1 mA. It supports continuous wave power dissipation of 75 mW per junction and functions within an operating temperature range of -65 °C to +175 °C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm that the device matches the specified X-band frequency range and electrical parameters before integration into designs. Ensure proper electrostatic discharge precautions are implemented during handling due to device sensitivity.
Select this part for high-drive local oscillator applications requiring low distortion in the X-band. Compare junction capacitance and series resistance values against circuit requirements to ensure optimal impedance matching. Verify that the package outline drawing aligns with the intended board layout and bonding methods.
This component belongs to the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series includes singles, pairs, and quads categorized by frequency bands such as S, C, X, Ku, K, and Ka. These devices utilize epitaxial silicon substrates with barrier metal deposition to form junctions with low series resistance.
Other parts in the DME, DMF, and DMJ series may serve as alternatives depending on the required drive level and frequency band. Verify that any substitute maintains compatible electrical specifications and physical dimensions for the existing footprint.
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