RF Diode DMJ4103-000 product image

DMJ4103-000

$1.75
  • Description:RF DIODE SCHOTTKY 75MW DIE
  • Series:DMJ

SKU:0c91fcad3167 Category: Brand:

  
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DMJ4103-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMJ4103-000

  • Description:RF DIODE SCHOTTKY 75MW DIE
  • Series:DMJ
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMJ4103-000

DMJ4103-000

RF Diode Overview

The DMJ4103-000 is a silicon beamless Schottky diode configured as an X-band bridge quad. It features a high barrier height optimized for mixer performance, with a forward voltage range of 550 mV to 650 mV at 1.0 mA and a reverse breakdown voltage minimum of 14 V at 10 μA. The device exhibits a maximum junction capacitance of 10 pF and a series resistance between 0.15 Ω and 0.30 Ω at 5 mA. Absolute maximum ratings include a peak inverse voltage (PIV) of VB, supply current up to 50 mA/V, and power dissipation of 75 mW per junction. Operating temperature ranges from -65°C to +150°C.

RF Diode Feature Summary

  • Mechanically rugged design suitable for microwave MIC assembly
  • High barrier height configuration for optimized mixer performance
  • Compatible with eutectic and conductive epoxy die attach methods

RF Diode Applications

  • Microwave MIC assembly
  • Automated high volume manufacturing lines
  • Mixers

RF Diode Procurement Notes

Verify the specific datasheet revision and compliance certificates prior to procurement. Confirm that the ordering suffix matches the required packaging format, such as Gel pak or film frame. Ensure all handling procedures adhere to industry-standard ESD precautions to prevent damage during storage and assembly.

RF Diode Selection Notes

Select this component when a high barrier height is required for X-band applications. Verify that the electrical specifications align with the system's mixer requirements. Consider the available SPICE model parameters for circuit simulation accuracy. Ensure the chosen package outline drawing number matches the intended PCB layout.

RF Diode Part Context

This part belongs to the Skyworks beamless diode family, designed for commercial and industrial uses. The family includes various configurations such as pairs, quads, rings, and bridges. These devices are engineered for high reliability and performance in microwave systems.

RF Diode Replacement Considerations

DMF4102-000 (Low Barrier), DME4101-000 (Medium Barrier).

RF Diode FAQ

What is the typical bonding configuration for the DMJ4103-000?

The typical bonding configuration involves wire bond connections using pure gold wire via thermocompression or ball-bonding methods.

Is the DMJ4103-000 RoHS compliant?

Yes, product compliance information can be found in the Skyworks Certificate of Conformance.

DMJ4103-000DMJ4103-000
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