DMJ70H1D0SV3

$0.64

Description：MOSFET N-CHANNEL 700V 6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:017bf9d2c3e7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMJ70H1D0SV3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CHANNEL 700V 6A TO251. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMJ70H1D0SV3

Description：MOSFET N-CHANNEL 700V 6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.8 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：420 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251 (Type TH3)
Package / Case：TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for DMJ70H1D0SV3

DMJ70H1D0SV3

Single FETs, MOSFETs Overview

The DMJ70H1D0SV3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 700V and a maximum on-resistance (RDS(ON)) of 1.0Ω at VGS = 10V. The device supports a continuous drain current of 6A at TC = +25°C and 4.5A at TC = +100°C. It utilizes a TO251 (Type HE1) case with matte tin annealed terminals over a copper leadframe. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
Constructed with a molded plastic "Green" molding compound that is halogen-free, antimony-free, and lead-free.

Single FETs, MOSFETs Applications

Adaptor
LCD & PDP TV
Lighting

Single FETs, MOSFETs Procurement Notes

Verify the document revision status before implementation, as the datasheet explicitly states this part is not recommended for new design and has no alternate part. Confirm package dimensions against the latest official outline specifications. Ensure thermal management aligns with the specified RθJC values under actual operating conditions rather than idealized test parameters.

Single FETs, MOSFETs Selection Notes

Select this component only if existing designs accommodate its discontinuation status. Evaluate thermal dissipation requirements carefully, as the TO251 package offers limited surface area compared to larger packages. Verify that the 700V breakdown voltage meets the specific circuit voltage headroom needs. Consider the gate threshold voltage characteristics when designing the drive circuitry for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This MOSFET belongs to Diodes Incorporated's PowerDI series, specifically utilizing the TO251 (Type HE1) case style. It is categorized as an N-Channel Enhancement Mode device intended for general-purpose power switching. The product summary highlights its balance between low on-resistance and high voltage handling capabilities.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states there is no alternate part available for this component. Designers must source remaining inventory or redesign the circuit using a different manufacturer's equivalent if this part is discontinued.