DMJ70H1D3SH3

Description：MOSFET N-CH 700V 4.6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:23b11647585b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMJ70H1D3SH3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 700V 4.6A TO251. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMJ70H1D3SH3

Description：MOSFET N-CH 700V 4.6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：351 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251 (Type TH3)
Package / Case：TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for DMJ70H1D3SH3

DMJ70H1D3SH3

Single FETs, MOSFETs Overview

The DMJ70H1D3SH3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 700V and a maximum static drain-source on-resistance (RDS(on)) of 1.3Ω at VGS = 10V. The device supports a continuous drain current (ID) of 4.6A at TC = +25°C and 2.9A at TC = +100°C. Total power dissipation reaches 41W at TC = +25°C. Operating and storage temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
Constructed with a molded plastic case using green molding compound, ensuring compliance with RoHS directives and free from halogen and antimony.

Single FETs, MOSFETs Applications

Motor Control
Backlighting
AC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet DS38306 Rev. 1-2 to confirm technical specifications match design requirements. Ensure that the TO251 package dimensions align with the PCB layout constraints. Confirm that the sourcing channel is authorized to guarantee product authenticity and traceability. Check for any specific handling instructions regarding moisture sensitivity level 1 per J-STD-020 during assembly.

Single FETs, MOSFETs Selection Notes

Select this MOSFET for designs requiring high voltage blocking capability combined with moderate current handling in a compact surface-mount package. Evaluate the thermal resistance characteristics and ensure adequate heatsinking or copper area on the PCB to manage power dissipation effectively within the specified junction temperature limits. Consider the gate charge parameters when designing the driver circuitry for optimal switching speeds.

Single FETs, MOSFETs Part Context

This component belongs to the DMJ series of N-channel MOSFETs from Diodes Incorporated. It utilizes the TO251 (uIPAK) case style, which provides a balance between thermal performance and space efficiency. The device is intended for general-purpose power switching applications where high reliability and low conduction losses are critical factors in system design.