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DMJ70H900HJ3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 700V 7A TO251. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ70H900HJ3
- Description：MOSFET N-CH 700V 7A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：603 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：68W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for DMJ70H900HJ3
Single FETs, MOSFETs Overview
The DMJ70H900HJ3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 700V and a maximum on-resistance (RDS(ON)) of 0.9Ω at VGS = 10V. The device supports a continuous drain current (ID) of 7A at TC = +25°C. It utilizes a TO251 (Type TH) case with matte tin annealed terminals over a copper leadframe. The component operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
- Constructed with a molded plastic "Green" molding compound that is halogen-free, antimony-free, and lead-free.
Single FETs, MOSFETs Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific revision status of the datasheet before procurement. This component is explicitly marked as not recommended for new design with no alternate part available. Confirm compliance with RoHS directives and environmental specifications such as halogen and antimony content requirements prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Evaluate thermal dissipation capabilities based on the specified junction-to-case thermal resistance. Ensure gate drive voltages remain within the ±30V limit to prevent damage. Consider the package's physical dimensions and mounting requirements for PCB layout optimization. Verify that the application load does not exceed the pulsed drain current or avalanche energy ratings during transient conditions.
Single FETs, MOSFETs Part Context
This component belongs to the PowerMOSFET category from Diodes Incorporated. It is designed for general-purpose power switching applications requiring high voltage blocking capability. The product line emphasizes efficiency through optimized on-resistance characteristics. The TO251 package provides a balance between thermal performance and surface-mount convenience.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states there is no alternate part available for this component. Designers should consider redesigning the circuit if this part is required for new production, as it is not recommended for new designs.
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