DMMT32N45CV-7

Overview

The DMMT32N45CV-7 is a matched pair of NPN small-signal transistors housed in an SOT563 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device provides a typical DC current gain (hFE) of 290 at IC = 2 mA, with a current gain-bandwidth product (fT) of 300 MHz. Electrical matching specifications include a base-emitter voltage difference (ΔVBE) of ≤ 2 mV and a current gain ratio (hFE1/hFE2) between 0.95 and 1. Thermal resistance from junction to ambient is 470 °C/W, supporting operation within a temperature range of -55 °C to +150 °C.

Feature Summary

• Integrated matched pair configuration ensuring precise current gain and base-emitter voltage alignment for differential circuit applications.
• Ultra-small SOT563 surface-mount package designed for high-density PCB layouts.
• High-speed switching capability supported by a 300 MHz transition frequency and low delay times.

Applications

• Differential amplifier stages requiring matched transistor characteristics.
• Low-voltage logic interface circuits operating at 5 V or lower.
• General-purpose signal processing and switching applications.

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets all relevant RoHS and halogen-free requirements for your target market. Ensure that the selected supplier sources directly from authorized channels to guarantee authenticity and traceability of the manufacturing date codes.

Selection Notes

Select this component when differential matching is critical for circuit performance, specifically where base-emitter voltage matching tighter than 2 mV is required. Evaluate the thermal constraints carefully, as the SOT563 package has a high thermal resistance of 470 °C/W. Ensure the application current remains below the 100 mA continuous limit and consider the 45 V collector-emitter voltage rating for voltage headroom.

Part Context

This part belongs to the DMMT series of matched transistor pairs manufactured by Diodes Incorporated. It utilizes standard silicon planar technology encapsulated in a lead-free SOT563 plastic outline. The device is designed to replace discrete matched pairs, reducing board space and improving consistency in analog and digital switching designs.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not maintain the strict ΔVBE and hFE matching ratios specified for this dual-transistor configuration.

FAQ

What is the maximum base-emitter voltage difference allowed between the two transistors?

The datasheet specifies a maximum Base-Emitter Voltage Matching (ΔVBE) of 2 mV when tested at VCE = 5 V and IC = 2 mA.

How does the package type affect the power dissipation capabilities?

The SOT563 package has a thermal resistance (RθJA) of 470 °C/W. Maximum power dissipation is limited to 265 mW under steady-state conditions on a minimum recommended pad layout.

Is this component suitable for automotive applications?

Standard versions are general-purpose. For automotive applications requiring AEC-Q100/101 qualification and PPAP capability, customers must contact Diodes Incorporated representatives directly.