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The DMMT3904HE3-TP is a dual NPN bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It features a surface-mount SOT-363 package and operates within a temperature range of -55°C to +150°C TJ. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40V, a maximum collector current (IC) of 200mA, and a transition frequency (fT) of 300MHz. The device has a maximum power dissipation of 200mW and meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against official MCC documentation to confirm package type and compliance status. Ensure that the procurement channel provides valid traceability records. Confirm that the received components match the specified SOT-363 footprint and electrical ratings before integration into production lines.
Select this component when a dual NPN configuration is required in a minimal footprint. The AEC-Q101 qualification makes it suitable for automotive environments. Compare the 200mA current rating and 40V voltage limits against circuit requirements to ensure adequate headroom for switching operations.
This part belongs to the DMMT3904 series of dual NPN transistors from Micro Commercial Components. It serves as an automotive-qualified alternative to standard general-purpose BJTs. The HE3 designation typically indicates lead-free and halogen-free construction compliant with RoHS directives.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters before considering any cross-reference components.