DMMT5551-7

Overview

The DMMT5551-7 is a matched NPN small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes an epitaxial planar die construction housed in a compact SOT-363 package. The device features a maximum collector-emitter voltage (VCEO) of 160 V and a continuous collector current (IC) rating of 200 mA. Power dissipation is rated at 300 mW, with a transition frequency (fT) of 300 MHz. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Matched NPN configuration for balanced circuit performance
• Compact SOT-363 surface mount packaging
• High voltage capability suitable for switching applications

Applications

• Medium power amplification circuits
• General purpose switching applications
• Low noise amplifier stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet revision to ensure compatibility with required tape and reel specifications. Confirm RoHS compliance status and flammability ratings directly from the official documentation before finalizing procurement orders.

Selection Notes

Select this component when a matched NPN pair is required in a minimal footprint. Ensure the design accounts for the 300 mW power dissipation limit and verify that the 160 V breakdown voltage exceeds the maximum circuit operating conditions.

Part Context

This part belongs to the DMMT5551 series of matched NPN transistors. It serves as a surface-mount alternative to through-hole discrete transistors, offering improved thermal performance and space efficiency for modern electronic assemblies requiring matched characteristics.

Replacement Considerations

Direct substitutes include the DMMT5551-7-F variant from Diodes Incorporated. Other manufacturers may offer equivalent parts under different part numbers; verify pinout and electrical parameters carefully.