DMN1003UCA6-7

$0.73

Description：MOSFET 2N-CH X3-DSN3518-6
Series：-

SKU:ec4c02ec8a7b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH X3-DSN3518-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：3315pF @ 6V
Power - Max：2.67W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X3-DSN3518-6
Grade：-
Qualification：-

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DMN1003UCA6-7

Overview

The DMN1003UCA6-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage of 12V and a maximum continuous source current of 23.6A at +25°C (VGS=4.5V). The device exhibits a typical on-resistance of 2.5mΩ at VGS=3.8V. Packaged in the X3-DSN3518-6 footprint measuring 3.54mm × 1.77mm with a height of 0.21mm, it supports operation from -55°C to +150°C. Total gate charge is typically 56.5nC.

Feature Summary

Dual-source architecture designed for high efficiency power management applications
Low profile package construction suitable for space-constrained designs
Integrated electrostatic discharge protection on the gate terminal

Applications

Battery Management Systems
Load Switching Circuits
Battery Protection Modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the procurement channel provides valid traceability documentation for the date code markings.

Selection Notes

Evaluate the thermal resistance characteristics against the target application's heat dissipation requirements. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Consider the input capacitance values when designing high-speed switching circuits to ensure adequate drive capability.

Part Context

This component belongs to the DMN100 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology to minimize on-state resistance while maintaining superior switching performance. The specific model employs the X3-DSN3518-6 case style for compact surface mount integration.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Cross-reference pinout configurations and electrical parameters before implementing any alternative components.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.