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DMN1003UFDE-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1003UFDE-13
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：3mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2551 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
Single FETs, MOSFETs datasheet and documents for DMN1003UFDE-13
Single FETs, MOSFETs Overview
The DMN1003UFDE-13 is a 12V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in U-DFN2020-6. It features a maximum drain-source breakdown voltage (BVDSS) of 12V and a continuous drain current (ID) of 22A at TA = +25°C. The device offers a low on-resistance (RDS(ON)) of 3mΩ max at VGS = 4.5V and 4mΩ max at VGS = 2.5V. Key electrical parameters include a gate threshold voltage range of 0.3V to 1.0V, total gate charge (Qg) of 27nC at VGS = 4.5V, and a power dissipation rating of 0.8W steady state. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance design for high-efficiency power management
- ESD protected gate structure
- Lead-free finish with RoHS compliance
Single FETs, MOSFETs Applications
- General-purpose interfacing switches
- Power-management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental standards required for your manufacturing process. Ensure compatibility with standard surface mount assembly procedures for the U-DFN2020-6 package type.
Single FETs, MOSFETs Selection Notes
Select this component when a 12V logic-level N-channel MOSFET is required for compact designs. The U-DFN2020-6 package provides a small footprint suitable for space-constrained applications. Consider the low RDS(ON) specifications for minimizing conduction losses in power management circuits requiring efficient switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power-management applications where low thermal resistance and compact packaging are critical design factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts or direct replacements. Do not substitute based solely on generic parameter matching without verifying pinout and package compatibility.
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