DMN1004UFDF-7

$0.54

Description：MOSFET N-CH 12V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cfa9e62ba7ab Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1004UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 15A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1004UFDF-7

Description：MOSFET N-CH 12V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN1004UFDF-7

DMN1004UFDF-7

Single FETs, MOSFETs Overview

The DMN1004UFDF-7 is a 12V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a U-DFN2020-6 (Type F) case. It features a maximum drain-source voltage of 12V and a continuous drain current of 15A at +25°C. The device offers a low on-resistance of 4.8mΩ at VGS=4.5V and 7.0mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.3V to 1.0V, a total gate charge of 47nC at VGS=10V, and a pulsed drain current capability of 70A. Operating temperatures span from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed with a 0.6mm profile and a compact PCB footprint of 4mm² for low-profile applications.
Features an ESD protected gate structure to enhance reliability during handling and operation.
Manufactured as a totally lead-free and fully RoHS compliant device that is halogen and antimony free.
Qualified to JEDEC standards for high reliability applications.

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm the component matches the U-DFN2020-6 (Type F) mechanical dimensions and pinout layout provided in the official datasheet. Ensure the procurement channel is authorized to guarantee product authenticity and compliance with environmental directives.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 12V rating with low on-resistance characteristics. Consider the thermal resistance values based on the intended mounting conditions, such as minimum pad layouts versus thermal bias to bottom layers. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable switching performance under varying load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1004 series of advanced N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN1004UFDF variant specifically utilizes the U-DFN2020-6 package to provide a compact solution suitable for space-constrained electronic designs.