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DMN1005UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1005UFDF-7
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2014 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN1005UFDF-7
Single FETs, MOSFETs Overview
The DMN1005UFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 12 V drain-source voltage rating and supports a continuous drain current of 12.2 A at ambient temperature. The device utilizes U-DFN2020-6 packaging with a maximum power dissipation of 700 mW. Key electrical characteristics include a gate-source voltage limit of ±8 V, a threshold voltage maximum of 1 V at 250 µA, and a gate charge of 23.4 nC at 8 V. The input capacitance is specified as 995 pF at 6 V. Operating temperatures range from -55°C to 150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards
- Low on-resistance optimized for efficient power switching applications
- Compact U-DFN2020-6 package designed for high-density surface mount assembly
Single FETs, MOSFETs Applications
- Automotive electronic systems requiring AEC-Q101 qualified components
- General-purpose low-side switching circuits
- Power management modules in compact consumer electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm that the ordering information matches the exact package variant and tape-and-reel specifications required for automated assembly processes. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Single FETs, MOSFETs Selection Notes
Select this component when an N-channel MOSFET with 12 V breakdown and automotive qualification is required. Evaluate thermal performance based on the 700 mW dissipation limit in the U-DFN2020-6 package. Ensure drive voltages align with the specified Rds(on) conditions for optimal efficiency in the target circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the DMN1005 series of N-channel MOSFETs from Diodes Incorporated. It is engineered for automotive and industrial applications where space constraints and reliability are critical. The U-DFN2020-6 footprint provides a balance between thermal performance and board area efficiency compared to larger packages.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent parts within the same family or alternative manufacturers offering identical pinouts and electrical ratings. Verify that any substitute meets the same AEC-Q101 automotive qualification standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
