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Product Detailed Parameters
- Description：MOSFET 2N-CH X3-DSN2718-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：2360pF @ 6V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X3-DSN2718-6
- Grade：-
- Qualification：-
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Overview
The DMN1006UCA6-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X3-DSN2718-6 package. It features a source-source breakdown voltage of 12V and a typical on-resistance of 5.3mΩ at VGS=3.8V. The device supports a maximum continuous source current of 16.6A at TA=+25°C with VGS=4.5V. Dynamic characteristics include a total gate charge of 35.2nC and input capacitance of 2,360pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual configuration within a compact footprint measuring 2.70mm by 1.81mm
- Low profile height of 0.21mm suitable for space-constrained designs
- Integrated electrostatic discharge protection on the gate terminal
Applications
- Battery management systems
- Load switching circuits
- Battery protection modules
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by the manufacturer's green product standards. Ensure compatibility with NiPdAu terminal finishes for soldering processes.
Selection Notes
Select this component when low on-state resistance is critical for high-efficiency power management. Evaluate thermal performance based on the junction-to-ambient resistance values provided for different mounting conditions. Consider the 12V breakdown voltage limit and the specific gate threshold requirements for the target application logic levels.
Part Context
This part belongs to the DMN series of N-channel MOSFETs designed for minimizing conduction loss while maintaining superior switching performance. The X3-DSN2718-6 case type represents a specific small outline package variant optimized for surface mount technology applications requiring minimal board area.
Replacement Considerations
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.
FAQ
What is the maximum continuous source current at elevated temperatures?
At an ambient temperature of +70°C with VGS=4.5V, the maximum continuous source current decreases to 13.2A.
How does the on-resistance vary with junction temperature?
The static source-source on-resistance increases as the junction temperature rises from -55°C to +150°C, as illustrated in the typical on-resistance versus junction temperature graphs.
Is the device suitable for life support applications?
No, Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without express written approval.
