DMN1008UFDF-7

$0.43

Description：MOSFET N-CH 12V 12.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:924c24c30e17 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1008UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 12.2A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1008UFDF-7

Description：MOSFET N-CH 12V 12.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：12.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.4 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：995 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN1008UFDF-7

DMN1008UFDF-7

Single FETs, MOSFETs Overview

The DMN1008UFDF-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a 12V drain-source voltage rating and operates within a -55°C to +150°C junction temperature range. The device offers an on-resistance of 8mΩ at VGS=4.5V with a continuous drain current of 12.2A, or 11.6mΩ at VGS=2.5V with 9.8A. Packaged in a U-DFN2020-6 (Type F) housing with a 0.6mm profile, it supports low-profile applications.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a 0.6mm profile ideal for low-profile applications with a compact PCB footprint of 4mm².
Includes a low gate threshold voltage and fast switching speed characteristics.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

Single FETs, MOSFETs Applications

Battery-management applications
Power-management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The DMN1008UFDF-7 designation corresponds to a 3,000-unit reel size in a 7-inch carrier. Confirm that the required package type matches the Type F specification listed in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 12V N-channel MOSFET with low on-resistance. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify thermal requirements against the provided junction-to-ambient resistance values for the intended PCB layout configuration.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 package. The product line focuses on providing robust switching capabilities for modern electronic systems requiring efficient power handling.

Single FETs, MOSFETs Replacement Considerations

An automotive-compliant version is available under the separate part number DMN1008UFDFQ. Verify if automotive qualification is required for the target application before selecting this standard industrial grade component.