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DMN1008UFDFQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
The DMN1008UFDFQ-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (V_DSS) of 12V and a maximum continuous drain current (I_D) of 12.2A at +25°C. The device offers a low on-resistance (R_DS(on)) of 8mΩ at V_GS = 4.5V and 12.5mΩ at V_GS = 2.5V. Total gate charge is 23.4nC at V_GS = 8V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package.
Verify the specific ordering suffix matches the required reel size. The DMN1008UFDFQ-13 designation indicates a 13-inch reel quantity of 10,000 units. Confirm that the component meets all necessary automotive quality requirements, including IATF 16949 manufacturing certification, before finalizing procurement specifications.
Select this component when a 12V N-channel MOSFET with high current handling is required in an automotive environment. The U-DFN2020-6 package provides a small PCB footprint of 4mm². Ensure the application supports the specified thermal dissipation limits and utilizes appropriate gate drive voltages to achieve the desired on-resistance performance.
This part belongs to Diodes Incorporated's automotive-compliant MOSFET portfolio. It is manufactured in IATF 16949 certified facilities. The product is classified as advanced information in official documentation. It is distinct from non-automotive variants by its qualification status and change control capabilities.
The DMN1008UFDFQ-7 is a verified substitute offering identical electrical characteristics and packaging. It differs only in the reel size, providing 3,000 units per 7-inch reel instead of 10,000 units per 13-inch reel. No functional changes are associated with this suffix variation.
The maximum pulsed drain current is 60A, based on a 380μs pulse duration with a 1% duty cycle.
Yes, the operating and storage temperature range extends up to a maximum junction temperature of +150°C.
The typical reverse recovery charge (Q_RR) is 4nC, measured at a forward current of 5A and a di/dt of 200A/μs.
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