Single FETs, MOSFETs DMN1008UFDFQ-13 product image

DMN1008UFDFQ-13

$0.09
  • Description:MOSFET BVDSS: 8V~24V U-DFN2020-6
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:5995dded4bde Category: Brand:

  
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DMN1008UFDFQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1008UFDFQ-13

  • Description:MOSFET BVDSS: 8V~24V U-DFN2020-6
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23.4 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:995 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (Type F)
  • Package / Case:6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN1008UFDFQ-13

DMN1008UFDFQ-13

Single FETs, MOSFETs Overview

The DMN1008UFDFQ-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (V_DSS) of 12V and a maximum continuous drain current (I_D) of 12.2A at +25°C. The device offers a low on-resistance (R_DS(on)) of 8mΩ at V_GS = 4.5V and 12.5mΩ at V_GS = 2.5V. Total gate charge is 23.4nC at V_GS = 8V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package.

Single FETs, MOSFETs Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Low profile 0.6mm case height suitable for space-constrained designs
  • Totally lead-free, halogen-free, and antimony-free construction
  • Fast switching speed with low gate threshold voltage

Single FETs, MOSFETs Applications

  • Battery management systems
  • Power management functions
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required reel size. The DMN1008UFDFQ-13 designation indicates a 13-inch reel quantity of 10,000 units. Confirm that the component meets all necessary automotive quality requirements, including IATF 16949 manufacturing certification, before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 12V N-channel MOSFET with high current handling is required in an automotive environment. The U-DFN2020-6 package provides a small PCB footprint of 4mm². Ensure the application supports the specified thermal dissipation limits and utilizes appropriate gate drive voltages to achieve the desired on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's automotive-compliant MOSFET portfolio. It is manufactured in IATF 16949 certified facilities. The product is classified as advanced information in official documentation. It is distinct from non-automotive variants by its qualification status and change control capabilities.

Single FETs, MOSFETs Replacement Considerations

The DMN1008UFDFQ-7 is a verified substitute offering identical electrical characteristics and packaging. It differs only in the reel size, providing 3,000 units per 7-inch reel instead of 10,000 units per 13-inch reel. No functional changes are associated with this suffix variation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current rating?

The maximum pulsed drain current is 60A, based on a 380μs pulse duration with a 1% duty cycle.

Is the device suitable for high-temperature environments?

Yes, the operating and storage temperature range extends up to a maximum junction temperature of +150°C.

What is the typical reverse recovery charge?

The typical reverse recovery charge (Q_RR) is 4nC, measured at a forward current of 5A and a di/dt of 200A/μs.

DMN1008UFDFQ-13DMN1008UFDFQ-13
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