DMN1014UFDF-13

$0.08

Description：MOSFET N-CH 12V 8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:63679e695e5f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1014UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 8A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1014UFDF-13

Description：MOSFET N-CH 12V 8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：515 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN1014UFDF-13

DMN1014UFDF-13

Single FETs, MOSFETs Overview

The DMN1014UFDF-13 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 12V and a low on-state resistance (RDS(ON)) of 16mΩ at VGS=4.5V, supporting an 8.0A continuous drain current. The device utilizes a U-DFN2020-6 package with a 0.6mm profile. Key electrical parameters include a gate threshold voltage of 0.3V to 1.0V, total gate charge of 6.4nC, and a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Features a low gate threshold voltage suitable for low-voltage drive applications.
Utilizes a compact U-DFN2020-6 case with a 0.6mm profile ideal for space-constrained designs.
Compliant with RoHS directives and halogen/antimony-free standards.

Single FETs, MOSFETs Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the component meets required environmental standards, including RoHS compliance and lead-free specifications. Ensure the U-DFN2020-6 footprint matches the PCB layout requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 12V rating with low conduction losses. The low gate threshold voltage facilitates compatibility with various logic-level drivers. Consider the thermal resistance characteristics when designing heat dissipation strategies for continuous operation. Verify that the package dimensions fit within the available board space constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for low-profile surface mount applications. The product summary indicates its focus on balancing low RDS(ON) with fast switching capabilities, targeting modern portable and battery-powered electronic devices.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without validating pinout, electrical ratings, and thermal performance against the original datasheet specifications.