DMN1019UFDE-7

Single FETs, MOSFETs Overview

The DMN1019UFDE-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) package. It features a drain-source voltage of 12V and a maximum continuous drain current of 11A at +25°C. The device offers a low on-state resistance of 10mΩ at VGS=4.5V and 12mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.35V to 0.8V, total gate charge of 27.3nC at VGS=4.5V, and input capacitance of 2425pF. Operating temperatures span from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low profile design with a 0.6mm height and compact PCB footprint for space-constrained applications
• Optimized switching performance combined with minimized on-state resistance for high efficiency
• Integrated ESD protection on the gate terminal
• Fully lead-free, RoHS compliant, and halogen/antimony free construction

Single FETs, MOSFETs Applications

• Load Switching
• Battery Management Applications
• Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the reel quantity of 3,000 units per manufacturer specifications. Confirm that the U-DFN2020-6 (Type E) package dimensions align with your PCB layout requirements. Ensure compliance with JEDEC standards for high reliability if required by your application environment. Check for automotive grade alternatives if AEC-Q qualification is necessary.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is needed in a minimal footprint. The low gate threshold voltage supports logic-level driving, while the fast switching speed aids in power management efficiency. Consider the thermal resistance values based on your copper pad layout and ambient temperature conditions to ensure safe operation within the specified junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1019 series of N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is manufactured in facilities certified to IATF 16949 standards. The product is qualified to JEDEC standards for high reliability and is suitable for general-purpose applications where size and performance are critical factors.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix as indicated in the datasheet notes.