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DMN1019USNQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SC59 T&R 10. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1019USNQ-13
- Description：MOSFET BVDSS: 8V~24V SC59 T&R 10
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2426 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：680mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN1019USNQ-13
Single FETs, MOSFETs Overview
The DMN1019USNQ-13 is a single N-channel enhancement mode MOSFET in an SC59 package. It features a drain-source voltage of 12V and a continuous drain current of 9.3A at 25°C. The maximum on-resistance is 10mΩ at VGS=4.5V, rising to 18mΩ at VGS=1.5V. Total gate charge is 27.3nC at VGS=4.5V. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
- Features ESD protected gate structure for enhanced reliability.
- Manufactured in IATF 16949 certified facilities.
Single FETs, MOSFETs Applications
- Load Switch
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and tape-and-reel specifications. Confirm that the component meets all required automotive qualification standards, including AEC-Q101 compliance and PPAP requirements, before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage switching applications requiring high current handling within a compact surface-mount footprint. Evaluate thermal performance based on PCB copper coverage, as power dissipation ratings vary significantly between minimum pad layouts and high-coverage configurations.
Single FETs, MOSFETs Part Context
This part belongs to the DMN1019 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is housed in the SC59 case style. The device is specifically engineered to meet stringent automotive industry requirements for reliability and change control.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal characteristics suitable for the intended automotive application environment.
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