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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 5.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.6A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：914pF @ 6V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN1029UFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) package with a maximum height of 0.6mm. The device provides a drain-source voltage (BVDSS) rating of 12V and a continuous drain current (ID) of 5.6A at +25°C. Maximum on-resistance (RDS(ON)) values are specified as 29mΩ at VGS = 4.5V, 34mΩ at VGS = 2.5V, 44mΩ at VGS = 1.8V, and 65mΩ at VGS = 1.5V. Total gate charge (Qg) is 10.5nC at VGS = 4.5V. Thermal resistance from junction to ambient (RθJA) is 91°C/W in steady state.
Feature Summary
- Dual N-channel configuration integrated into a single low-profile package
- Optimized for minimized on-state resistance while maintaining superior switching performance
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Power-management functions
- Portable power adaptors
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier format. Confirm that the specific revision of the datasheet matches the production lot requirements. Ensure compliance with the stated moisture sensitivity level and soldering standards during assembly processes.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Evaluate the RDS(ON) specifications against the expected gate drive voltage levels to ensure adequate conduction efficiency. Consider the thermal characteristics and package size constraints relative to the intended PCB layout and heat dissipation capabilities.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 package. The product line focuses on high-efficiency power management solutions suitable for portable electronics and load switching applications.
Replacement Considerations
The datasheet lists the DMN1029UFDB-7 as an alternative packing option within the same product family. Verify pinout compatibility and electrical parameter equivalence before substituting with other dual N-channel MOSFETs from different manufacturers.
