ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMN1032UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 4.8A U-WLB1010-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1032UCB4-7
- Description：MOSFET N-CH 12V 4.8A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：26mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
Single FETs, MOSFETs datasheet and documents for DMN1032UCB4-7
Single FETs, MOSFETs Overview
The DMN1032UCB4-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 4.8 A. The device exhibits a maximum on-resistance (Rds(on)) of 9.5 mΩ at a gate-source voltage (Vgs) of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 0.9 W. The component utilizes an X1-WLB0808-4 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration for efficient switching control
- Low on-resistance characteristic optimized for minimal conduction losses
- Compact surface-mount footprint designed for high-density PCB layouts
Single FETs, MOSFETs Applications
- Battery protection circuits in portable electronic devices
- Load switching applications in consumer electronics
- Power management modules requiring low-voltage switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's official datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and check for any recent product change notifications or lifecycle updates directly from Diodes Incorporated before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in space-constrained designs. Ensure the application voltage remains below the 12 V drain-source rating and that thermal management supports the 0.9 W power dissipation limit. Verify gate drive levels align with the specified Rds(on) test conditions for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated, focusing on low-voltage switching applications. The UCB4 suffix indicates a specific surface-mount package variant within this family, designed for automated assembly and compact form factors common in modern consumer electronics and battery-powered systems.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering replacements from other manufacturers to ensure functional equivalence.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
