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Product Detailed Parameters
- Description：MOSFET 2N-CH U-WLB1818-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.45W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-UFBGA, WLBGA
- Supplier Device Package：U-WLB1818-4
- Grade：-
- Qualification：-
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Overview
The DMN1033UCB4-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes a chip-level X1-WLB1818-4 surface-mount package to minimize footprint area. The device features a drain-source breakdown voltage (Vds) of 10 V and a continuous drain current (Id) of 12 A at 25°C. Its typical on-resistance (Rds(on)) is 6.5 mΩ at a gate-source voltage of 4.5 V. The component supports a maximum junction temperature of 150°C and is designed for low-power applications requiring high efficiency.
Feature Summary
- Ultra-thin chip-level packaging enables significant board space reduction compared to traditional packages.
- Low on-state resistance minimizes conduction losses and improves overall power efficiency.
- High current handling capability suitable for dense power management designs.
Applications
- Single-cell and dual-cell lithium-ion battery protection circuits
- Power load switching in portable consumer electronics
- DC/DC converter input/output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides traceability documentation, including RoHS compliance certificates and material declarations, as required for regulated electronic assemblies.
Selection Notes
Select this component when design constraints require minimal PCB area alongside high current capacity. Compare the Rds(on) specifications under actual operating gate voltages rather than standard test conditions. Evaluate thermal performance within the final enclosure to ensure the junction temperature remains within safe operating limits during peak load scenarios.
Part Context
This part belongs to Diodes Incorporated's DMN series of chip-scale MOSFETs. These devices are engineered specifically for mobile and handheld applications where physical size and weight are critical factors. The series offers a balance of low resistance and robust current handling in a footprint significantly smaller than standard SOT or DFN packages.
Replacement Considerations
Potential substitutes include other 10V N-channel MOSFETs in X1-WLB or similar chip-scale packages from Diodes Incorporated or alternative manufacturers. Verify that replacement parts match the 12A current rating and 6.5mΩ resistance while maintaining identical pin configurations to avoid redesigning the footprint.
