SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
DMN1053UCP4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 2.7A X3DSN0808-4. Review the specifications below when checking this part for your BOM.
The DMN1053UCP4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X3-DSN0808-4 Chip-Scale Package. It features a drain-source voltage (BVDSS) of 12V and a maximum continuous drain current (ID) of 4.0A at +25°C. The device achieves a typical static drain-source on-resistance (RDS(ON)) of 38mΩ at VGS = 4.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.35V to 0.7V, total gate charge (Qg) of 7.2nC typ., and input capacitance (Ciss) of 612pF typ. Thermal characteristics specify a junction-to-ambient thermal resistance (RθJA) of 167°C/W on FR-4 with minimum pads.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets environmental compliance requirements, specifically ensuring it is free of intentionally added lead, halogens, and antimony as defined by the manufacturer's green product standards. Cross-reference the date code markings against the official key to validate production year and month.
Select this component when designing circuits requiring low-voltage operation with a 12V drain-source rating. The low RDS(ON) makes it suitable for applications demanding minimal conduction losses. Ensure the PCB layout utilizes the recommended pad dimensions for the X3-DSN0808-4 package to achieve the specified thermal performance and mechanical stability during surface mount assembly.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a newer generation designed to optimize power density through advanced packaging technologies. The device is distinct within the portfolio due to its specific combination of low voltage rating and chip-scale form factor.
Consult the manufacturer's official documentation for verified equivalent parts. No substitute part numbers are confirmed in the provided source material.
The device supports an operating and storage temperature range from -55°C to +150°C.
The CSP design combines low thermal impedance with a minimal footprint. Thermal resistance varies based on the PCB copper area, ranging from 167°C/W on minimum pads to 93°C/W with a 1-inch square copper plate.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.