Single FETs, MOSFETs DMN1053UCP4-7 product image

DMN1053UCP4-7

$0.48
  • Description:MOSFET N-CH 12V 2.7A X3DSN0808-4
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:edbec98d2048 Category: Brand:

  
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DMN1053UCP4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 2.7A X3DSN0808-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1053UCP4-7

  • Description:MOSFET N-CH 12V 2.7A X3DSN0808-4
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs:42mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:908 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):1.34W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X3-DSN0808-4
  • Package / Case:4-XFBGA, CSPBGA

Single FETs, MOSFETs datasheet and documents for DMN1053UCP4-7

DMN1053UCP4-7

Single FETs, MOSFETs Overview

The DMN1053UCP4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X3-DSN0808-4 Chip-Scale Package. It features a drain-source voltage (BVDSS) of 12V and a maximum continuous drain current (ID) of 4.0A at +25°C. The device achieves a typical static drain-source on-resistance (RDS(ON)) of 38mΩ at VGS = 4.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.35V to 0.7V, total gate charge (Qg) of 7.2nC typ., and input capacitance (Ciss) of 612pF typ. Thermal characteristics specify a junction-to-ambient thermal resistance (RθJA) of 167°C/W on FR-4 with minimum pads.

Single FETs, MOSFETs Feature Summary

  • Utilizes TR-MOS technology to minimize on-state losses and enable ultra-fast switching for high-efficiency power transfer.
  • Employs a Chip-Scale Package (CSP) with a footprint of 0.81mm x 0.81mm and a height of 0.29mm to increase power density.
  • Totally lead-free and fully RoHS compliant, containing no purposely added lead, halogens, or antimony.

Single FETs, MOSFETs Applications

  • DC-DC Converters
  • Battery Management Systems
  • Load Switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets environmental compliance requirements, specifically ensuring it is free of intentionally added lead, halogens, and antimony as defined by the manufacturer's green product standards. Cross-reference the date code markings against the official key to validate production year and month.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low-voltage operation with a 12V drain-source rating. The low RDS(ON) makes it suitable for applications demanding minimal conduction losses. Ensure the PCB layout utilizes the recommended pad dimensions for the X3-DSN0808-4 package to achieve the specified thermal performance and mechanical stability during surface mount assembly.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a newer generation designed to optimize power density through advanced packaging technologies. The device is distinct within the portfolio due to its specific combination of low voltage rating and chip-scale form factor.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official documentation for verified equivalent parts. No substitute part numbers are confirmed in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum operating temperature range for the DMN1053UCP4?

The device supports an operating and storage temperature range from -55°C to +150°C.

How does the package design impact thermal performance?

The CSP design combines low thermal impedance with a minimal footprint. Thermal resistance varies based on the PCB copper area, ranging from 167°C/W on minimum pads to 93°C/W with a 1-inch square copper plate.

DMN1053UCP4-7DMN1053UCP4-7
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