DMN10H099SFG-13

$0.20

Description：MOSFET N-CH 100V 4.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:82968a987618 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H099SFG-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 4.2A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H099SFG-13

Description：MOSFET N-CH 100V 4.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1172 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H099SFG-13

DMN10H099SFG-13

Single FETs, MOSFETs Overview

The DMN10H099SFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 4.2 A at TA = +25°C with VGS = 10V. The device exhibits a typical static drain-source on-resistance (RDS(on)) of 54 mΩ at VGS = 10V and 58 mΩ at VGS = 6.0V. Total gate charge (Qg) is typically 25.2 nC at VGS = 10V. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) ensures on-state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Qualified to AEC-Q101 Standards for High Reliability

Single FETs, MOSFETs Applications

Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3000 units, as distinct from other suffixes like '-7'. Confirm compliance requirements such as RoHS and Halogen-free status against project specifications. Ensure the PowerDI3333-8 footprint matches the PCB layout constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with 100V rating and low on-resistance is required for high-density designs. Compare the 54 mΩ RDS(on) at 10V drive against alternative packages to evaluate thermal performance in space-constrained applications. Consider the 4.2A continuous current capability relative to the expected load profile and ambient operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize the POWERDI3333-8 surface-mount package, designed to replace larger traditional packages while maintaining electrical performance. The series targets power management applications requiring small footprints and high efficiency.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for other DMN10 series variants or similar 100V N-channel MOSFETs in the PowerDI3333-8 package. Verify pinout compatibility and ensure that RDS(on), Qg, and thermal resistance parameters meet or exceed the original design requirements.