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DMN10H120SFG-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 3.8A PWRDI3333. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H120SFG-13
- Description：MOSFET N-CH 100V 3.8A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：549 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for DMN10H120SFG-13
Single FETs, MOSFETs Overview
The DMN10H120SFG-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 surface-mount package. It features a drain-source breakdown voltage of 100V and a gate-source voltage rating of ±20V. The device offers a maximum on-resistance of 110mΩ at VGS=10V with a continuous drain current of 3.8A at +25°C. Key electrical parameters include a gate threshold voltage of 1.5V to 3.0V, total gate charge of 10.6nC at VGS=10V, and input capacitance of 549pF. Thermal characteristics specify a junction-to-ambient resistance of 52°C/W under steady-state conditions.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
- Qualified to AEC-Q101 standards for high reliability automotive applications.
Single FETs, MOSFETs Applications
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are critical for the intended assembly process. Ensure the selected variant matches the required thermal and electrical ratings for the target circuit design.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with 100V capability is required for space-constrained designs. The POWERDI3333-8 package provides significant board area savings compared to traditional SO-8 footprints. Consider the 110mΩ on-resistance and 3.8A continuous current rating to ensure adequate thermal headroom for the specific load conditions and ambient temperature environment.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology and is available in various configurations within the POWERDI3333-8 package family. The product line focuses on providing low on-resistance and small form factors suitable for modern portable and industrial electronics requiring efficient power switching solutions.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists DMN10H120SFG-7 as an alternative part number offering identical electrical characteristics but packaged in a 2000-unit tape and reel format instead of the 3000-unit configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
