DMN10H170SFDE-13

Single FETs, MOSFETs Overview

The DMN10H170SFDE-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) package. It features a drain-source voltage rating of 100V and a continuous drain current of 2.9A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. Total gate charge is specified as 9.7nC at VGS=10V. Thermal characteristics include a steady-state junction-to-ambient resistance of 189°C/W and a total power dissipation of 0.66W at +25°C.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features a 0.6mm profile ideal for low-profile applications with a compact PCB footprint of 4mm².
• Constructed with a molded plastic case using green molding compound that is halogen and antimony free.

Single FETs, MOSFETs Applications

• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per reel, distinct from the '-7' suffix which indicates 3,000 units. Confirm compliance requirements such as RoHS 2/3 and lead-free status align with project specifications. Ensure the U-DFN2020-6 (Type E) package dimensions match the target PCB layout constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-channel MOSFET with low RDS(ON) is required in a small form factor. The U-DFN2020-6 package suits space-constrained designs needing a 0.6mm profile. Evaluate thermal performance based on the 189°C/W junction-to-ambient resistance for steady-state operation on FR-4 substrates with minimum recommended pad layouts.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on balancing low on-resistance with fast switching capabilities. The DMN10H170SFDE variant specifically utilizes the U-DFN2020-6 package to provide a compact solution for modern electronic devices requiring efficient power handling in limited board areas.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists DMN10H170SFDE-7 as an alternative ordering option within the same family, differing only in packaging quantity (3,000 vs 10,000 units per reel). No other cross-references or direct substitutes are documented in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±20V.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated directly.