DMN10H170SFG-7

$0.37

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:00ce2b064582 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SFG-7

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：870.7 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H170SFG-7

DMN10H170SFG-7

Single FETs, MOSFETs Overview

The DMN10H170SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 2.9A at +25°C ambient temperature, rising to 8.5A at case temperatures of +25°C. The device exhibits a static drain-source on-resistance of 122mΩ at VGS=10V and 133mΩ at VGS=4.5V. Total gate charge is specified as 14.9nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Occupies only 33% of the board area compared to SO-8 packages, enabling smaller end products.
Qualified to AEC-Q101 standards for automotive reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates standard compliance and tape & reel packaging containing 2000 units per reel. Confirm that the required package matches the POWERDI3333 footprint. Ensure the component meets environmental requirements such as being halogen and antimony free if applicable to your design specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with a 100V rating. Consider the thermal characteristics carefully; steady-state power dissipation is limited to 0.94W at +25°C ambient without a copper plate. Utilize a copper heat sink or pad layout to achieve higher current handling capabilities up to 8.5A. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 surface mount package. The series is engineered to balance low on-resistance with fast switching speeds, targeting space-constrained power electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts within the DMN10 series or other manufacturers offering similar 100V, 8-pin PowerDI packages. Ensure pinout compatibility and verify that electrical parameters like RDS(ON) and Qg meet or exceed original requirements.