DMN10H170SFGQ-7

$0.25

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:527540dfb93e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SFGQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SFGQ-7

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：870.7 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H170SFGQ-7

DMN10H170SFGQ-7

Single FETs, MOSFETs Overview

The DMN10H170SFGQ-7 is an N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 100V and a gate-source voltage of ±20V. The maximum on-resistance is 122mΩ at VGS=10V and 133mΩ at VGS=4.5V. Continuous drain current reaches 2.9A at TA=+25°C and 8.5A at TC=+25°C. Total gate charge is 14.9nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards for automotive high reliability applications
PPAP capable with 100% unclamped inductive switching tested in production
PowerDI3333-8 package occupies 33% less board area than SO-8

Single FETs, MOSFETs Applications

Motor Control
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required reel quantity, as the base part number corresponds to different packaging options. Confirm that the component meets RoHS 3 and halogen-free requirements if mandated by project specifications. Ensure the supplier provides traceability documentation consistent with PPAP capabilities for automotive-grade components.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining 100V capability. Evaluate thermal resistance values based on whether the design utilizes a minimal FR-4 pad layout or a dedicated copper heat sink plane. Verify gate drive voltage levels against the specified RDS(ON) thresholds to ensure optimal conduction efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the DMN10 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology within the PowerDI surface-mount family. The product line targets automotive environments requiring robust performance under varying thermal conditions.