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DMN10H170SVTQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.6A TSOT26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H170SVTQ-13
- Description：MOSFET N-CH 100V 2.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN10H170SVTQ-13
Single FETs, MOSFETs Overview
The DMN10H170SVTQ-13 is a 100V N-channel enhancement mode MOSFET in a TSOT26 package. It features a maximum drain-source on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V, with continuous drain currents of 2.6A at +25°C and 2.3A at VGS=4.5V. The device has a gate threshold voltage range of 1.0V to 3.0V, total gate charge of 9.7nC at VGS=10V, and input capacitance of 1,167pF. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
- PPAP capable
Single FETs, MOSFETs Applications
- Power management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the required reel quantity before procurement. Confirm that the component meets AEC-Q101 qualification requirements if automotive applications are intended. Ensure the TSOT26 package dimensions align with the target PCB footprint layout. Check for PPAP capability needs during the sourcing phase.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low on-state resistance combined with fast switching performance. Consider the thermal characteristics and power dissipation limits when designing for steady-state versus pulsed current conditions. Evaluate the gate threshold voltage range to ensure compatibility with the driving logic levels available in the system architecture.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed for high-efficiency power management. It utilizes a TSOT26 case constructed from molded plastic with a matte tin annealed copper leadframe. The device is rated for a maximum drain-source voltage of 100V and supports a wide operating temperature range.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated 100V N-channel MOSFETs in the TSOT26 package. Verify pinout compatibility and electrical parameter equivalence, specifically RDS(ON) and BVDSS, before substituting.
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