DMN10H220L-13

$0.43

Description：MOSFET N-CH 100V 1.4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3579aa0d6f18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220L-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.4A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220L-13

Description：MOSFET N-CH 100V 1.4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：401 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN10H220L-13

DMN10H220L-13

Single FETs, MOSFETs Overview

The DMN10H220L-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 1.6A at 25°C, dropping to 1.3A at 70°C. The device offers a typical on-resistance of 160mΩ at VGS=10V and 190mΩ at VGS=4.5V. Packaged in a standard SOT-23 form factor, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Maintains superior switching performance alongside low input capacitance.
Features fast switching speed and low input/output leakage characteristics.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Single FETs, MOSFETs Applications

Load switches
High-efficiency power-management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive standards if applicable, as the standard DMN10H220L differs from the automotive-compliant DMN10H220LQ variant. Ensure compatibility with the specified SOT-23 footprint during PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 100V rating with moderate current handling capabilities up to 1.6A. Consider the thermal derating curve when operating above 25°C ambient temperature. Evaluate the gate threshold voltage requirements against the drive circuit capability, particularly for the 4.5V operation condition where on-resistance increases.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 package. The product line focuses on balancing low on-resistance with efficient switching performance for compact power solutions.

Single FETs, MOSFETs Replacement Considerations

For automotive-grade requirements, consider the DMN10H220LQ. Other DMN series devices may serve as functional replacements if voltage and current ratings align with the application needs.

Single FETs, MOSFETs FAQ

Is the DMN10H220L automotive compliant?

No, the standard DMN10H220L is not automotive compliant. An automotive-compliant version is available under the separate datasheet for the DMN10H220LQ.