Single FETs, MOSFETs DMN10H220L-7 product image

DMN10H220L-7

$0.37
  • Description:MOSFET N-CH 100V 1.4A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c578e6a1b249 Category: Brand:

  
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DMN10H220L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.4A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220L-7

  • Description:MOSFET N-CH 100V 1.4A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:220mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:401 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN10H220L-7

DMN10H220L-7

Single FETs, MOSFETs Overview

The DMN10H220L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 1.6A at +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 160mΩ at VGS=10V and 190mΩ at VGS=4.5V. Packaged in a standard SOT-23 surface-mount format, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high-efficiency power management applications with minimized on-state resistance.
  • Maintains superior switching performance alongside low input capacitance.
  • Features low input and output leakage characteristics.

Single FETs, MOSFETs Applications

  • Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the selected part matches the standard SOT-23 package dimensions required for the target PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 100V breakdown voltage and moderate current handling up to 1.6A. Evaluate the thermal resistance parameters against the expected ambient operating conditions. Consider the gate threshold voltage specifications to ensure compatibility with the intended logic drive levels.

Single FETs, MOSFETs Part Context

This component belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, molded plastic SOT-23 package. The product line targets general-purpose switching applications where efficiency and compact form factors are prioritized.

Single FETs, MOSFETs Replacement Considerations

An automotive-compliant version of this device is available under the separate datasheet designation DMN10H220LQ.

DMN10H220L-7DMN10H220L-7
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