SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
DMN10H220L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.4A SOT23. Review the specifications below when checking this part for your BOM.
The DMN10H220L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 1.6A at +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 160mΩ at VGS=10V and 190mΩ at VGS=4.5V. Packaged in a standard SOT-23 surface-mount format, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the selected part matches the standard SOT-23 package dimensions required for the target PCB layout.
Select this component for circuits requiring a 100V breakdown voltage and moderate current handling up to 1.6A. Evaluate the thermal resistance parameters against the expected ambient operating conditions. Consider the gate threshold voltage specifications to ensure compatibility with the intended logic drive levels.
This component belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, molded plastic SOT-23 package. The product line targets general-purpose switching applications where efficiency and compact form factors are prioritized.
An automotive-compliant version of this device is available under the separate datasheet designation DMN10H220LQ.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.