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DMN10H220LE-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.3A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H220LE-13
- Description：MOSFET N-CH 100V 2.3A SOT223
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：220mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：401 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for DMN10H220LE-13
Single FETs, MOSFETs Overview
The DMN10H220LE-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 2.3A at TA=+25°C. The device offers a maximum on-resistance (RDS(ON)) of 220mΩ at VGS=10V and 250mΩ at VGS=4.5V. Total gate charge (Qg) is 8.3nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT223 package.
Single FETs, MOSFETs Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Maintains superior switching performance through low input capacitance and fast switching speed.
- Qualified to AEC-Q101 standards for high reliability automotive applications.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, including RoHS and REACH directives, before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 100V rating with moderate current handling capabilities up to 2.3A. Consider the thermal characteristics, specifically the junction-to-ambient thermal resistance, when designing heat dissipation strategies. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a surface-mount SOT223 case. The product line focuses on balancing low on-resistance with efficient switching characteristics for general-purpose power management tasks.
Single FETs, MOSFETs Replacement Considerations
An automotive-compliant version is available under the separate datasheet for part number DMN10H220LEQ. Verify pinout compatibility and electrical parameter tolerances if substituting with other 100V N-channel MOSFETs in the SOT223 package.
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current at an ambient temperature of +70°C?
At an ambient temperature of +70°C, the maximum continuous drain current is 1.8A.
Is this component suitable for use in life support devices?
No, Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without express written approval.
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