DMN10H220LFDF-13

$0.07

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:937962940f15 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220LFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 61V~100V U-DFN2020. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220LFDF-13

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：225mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：384 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN10H220LFDF-13

DMN10H220LFDF-13

Single FETs, MOSFETs Overview

The DMN10H220LFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 2.2 A at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 225 mΩ at V_GS = 10 V and 290 mΩ at V_GS = 4.5 V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.1 W in the U-DFN2020-6 package.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
Verified for reliability with 100% Unclamped Inductive Switch (UIS) testing during production.
Constructed using lead-free materials that are fully RoHS compliant and free from halogens and antimony.

Single FETs, MOSFETs Applications

Load switch circuits
High-efficiency power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards, before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and low on-resistance are required for compact load switching designs. The U-DFN2020-6 package provides a small footprint suitable for space-constrained PCB layouts. Ensure gate drive voltages align with the specified thresholds for optimal R_DS(ON) performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on balancing low conduction losses with fast switching capabilities. The DMN10H220LFDF variant specifically targets applications requiring robust performance in a miniature surface-mount form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching critical parameters such as V_DSS, I_D, R_DS(ON), and package dimensions to ensure functional compatibility without design modification.

Single FETs, MOSFETs FAQ

Is the DMN10H220LFDF-13 qualified for automotive applications?

The datasheet does not explicitly state AEC-Q101 qualification for this specific part number. Automotive-grade parts require specific change control and PPAP capability; contact the manufacturer directly for confirmation.