ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMN10H220LFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 61V~100V U-DFN2020. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H220LFDF-7
- Description：MOSFET BVDSS: 61V~100V U-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：225mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：384 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN10H220LFDF-7
Single FETs, MOSFETs Overview
The DMN10H220LFDF-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 surface-mount package and provides a maximum continuous drain current of 2.2A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 225mΩ at VGS=10V and 290mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1V to 2.5V, total gate charge of 6.7nC at VGS=10V, and input capacitance of 384pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 110°C/W with minimum pad layout.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Complies with RoHS directives and is halogen and antimony free, classified as a "Green" device.
- Features low input/output leakage and fast switching speed capabilities.
Single FETs, MOSFETs Applications
- Load Switch
- High-efficiency power management
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required automotive or industrial qualification standards if applicable, as standard production parts may differ from those requiring AEC-Q100/101 certification. Ensure compatibility with the intended PCB footprint and soldering profile for the U-DFN2020-6 case.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with 100V breakdown voltage and low RDS(ON) is required. Consider the U-DFN2020-6 package dimensions for space-constrained designs. Evaluate the thermal resistance and power dissipation limits relative to the expected operating temperature and duty cycle to ensure safe operation within the specified junction temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching speeds in small surface-mount packages suitable for modern electronic devices requiring efficient power control solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified equivalent parts. Do not assume cross-compatibility based solely on voltage and current ratings without verifying pinout, package dimensions, and electrical parameter tolerances.
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 2.2A at an ambient temperature of +25°C.
Is the device qualified for automotive applications?
Standard production parts are not automatically qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact Diodes Incorporated directly.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
