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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 8A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Rds On (Max) @ Id, Vgs：222mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：384pF @ 25V
- Power - Max：2.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type R)
- Grade：-
- Qualification：-
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Overview
The DMN10H220LPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 (SWP) surface-mount package with wettable flank terminals. The device supports a drain-source voltage of 100V and a continuous drain current of 8.0A at 25°C case temperature. Maximum on-resistance is specified as 222mΩ at VGS=10V and 270mΩ at VGS=4.5V. Total gate charge is 6.7nC at VGS=10V. Thermal resistance from junction to ambient is 57°C/W, with a maximum operating temperature range of -55°C to +150°C.
Feature Summary
- Wettable flank design for improved optical inspection reliability
- Low input capacitance and fast switching speed characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switch circuits
- High-efficiency power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition provided in the manufacturer documentation. Ensure the application environment remains within the specified thermal limits.
Selection Notes
Select this component when a 100V rating and low on-resistance are required in a compact PowerDI5060-8 footprint. Consider the 8.0A continuous current capability and the 57°C/W thermal resistance for heat dissipation planning. Verify compatibility with the intended gate drive voltage levels, particularly regarding the 4.5V and 10V threshold specifications.
Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI5060-8 package technology designed for high-density surface mount applications. The product represents a newer generation offering focused on minimizing on-state resistance while maintaining superior switching performance.
Replacement Considerations
Consult official cross-reference lists or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without verifying pinout and package dimensions.
